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BEGIN:VEVENT
DTSTART;VALUE=DATE:20230606T151500
DTEND;VALUE=DATE:20230606T151500
UID:13695@agenda.unifr.ch
DESCRIPTION:The ability to modulate the spin-orbit (SO) interaction is crucial for engineering a wide range of spintronics-based quantum devices, extending from state-of-the-art data storage to materials for quantum computing. The use of proximity-induced effects for this purpose may become the mainstream approach and their experimental verification using angle-resolved photoelectron spectroscopy (ARPES) has so far been elusive. Here, using the advantages of soft-X-ray ARPES on its probing depth and intrinsic resolution in three-dimensional momentum k, we identify a distinct modulation of the SO interaction in a van der Waals semiconductor (MoSe2) proximitized to a high-Z metal (Pb), and measure its variation through the k space. The strong SO field from Pb boosts the SO splitting by up to 30% at the H-point of the bulk Brillouin zone, the spin-orbit hotspot of MoSe2. Tunability of the splitting via the Pb thickness allows its tailoring to particular applications in emerging quantum devices.
SUMMARY:Proximity-induced modulation of spin-orbit interaction in MoSe2 interfaced with amorphous Pb
CATEGORIES:Séminaire
LOCATION:PER 08\, 2.73\, Chemin du Musée 3\, 1700 Fribourg
URL;VALUE=URI:https://agenda.unifr.ch/e/fr/13695
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